Electrostatic chuck having a heating and chucking capabilities

ABSTRACT

In one example, an electrostatic chuck comprises a chuck body having a top surface configured to support a substrate and a bottom surface opposite the top surface. The chuck body comprises one or more chucking electrodes, and one or more heating elements. The chuck body further comprises first terminals disposed on the bottom surface of the chuck body and coupled with the one or more heating elements, second terminals disposed on the bottom surface of the chuck body and coupled with the one or more chucking electrodes, and third terminals disposed on the bottom first surface of the chuck body and coupled with the one or more chucking electrodes.

BACKGROUND Field

Embodiments of the present disclosure generally relate to methods andapparatus for processing substrates. Embodiments of the disclosurerelate to substrate processing platforms, which use multiple processingchambers for processing substrates. More particularly, embodiments ofthe disclosure relate to electrostatic chucks for such processingchambers.

Description of the Related Art

Conventional semiconductor wafer processing equipment, typicallyreferred to as cluster tools, are configured to perform one or moreprocesses during substrate processing. For example, a cluster tool caninclude a physical vapor deposition (PVD) chamber for performing a PVDprocess on a substrate, an atomic layer deposition (ALD) chamber forperforming an ALD process on a substrate, a chemical vapor deposition(CVD) chamber for performing a CVD process on a substrate, and/or one ormore other processing chambers for performing one or more otherprocesses on a substrate.

In semiconductor wafer processing equipment, substrate supports are usedfor retaining substrates (or wafers) during processing. The substraterests on a susceptor, for example an electrostatic chuck. Electrostaticchucks (or chuck) secure a substrate by creating an electrostaticattractive force between the substrate and the electrostatic chuck. Avoltage applied to one or more insulated electrodes in the electrostaticchuck induces opposite polarity charges in the surface of the substrateand substrate supporting surface of the electrostatic chuck,respectively. The opposite charges generate a “chucking force” whichcauses the substrate to be pulled onto or attracted to the substratesupporting surface of the electrostatic chuck, thereby retaining thesubstrate. Conventional electrostatic chuck designs include assembliesthat are inseparable due to the need to form good thermal and electricalcoupling with various internal (e.g., cooling channels, electricalwires/leads connections) and external components (e.g., power supplies),and allow portions of the electrostatic chuck assembly to be disposedwithin a vacuum environment.

Many thin film deposition and etch processes performed in conventionalsemiconductor wafer processing equipment employ single substrateprocessing chambers that are attached to a mainframe of the clustertool, wherein a single substrate is loaded into a dedicated vacuumprocess chamber having dedicated hardware therein to support thesubstrate during a process performed thereon. The time required to loadand unload the substrate from the dedicated chamber using a robot thatis able to pick up and transfer one wafer at a time, which commonlyincludes the time needed to chuck and de-chuck the substrate from thesubstrate support in each process chamber, adds overhead time to thetotal time required to process a substrate in a cluster tool, decreasesthroughput, and increases cost of ownership (CoO).

Thus, the aforementioned cluster tools and substrate supporting hardwarehave limitations, such as mechanical throughput, thermal stabilityduring processing, and process flexibility. Therefore, what is needed inthe art is a transfer apparatus for the cluster tool capable ofimproving the mechanical throughput, thermal stability, and increasingprocess flexibility. Thus, there is also a need for a substrate supportassembly and substrate transfer mechanism, and method of using the same,that solves the problems described above.

SUMMARY

In one example, an electrostatic chuck comprises a chuck body having atop surface configured to support a substrate and a bottom surfaceopposite the top surface. The chuck body comprises one or more chuckingelectrodes, and one or more heating elements. The chuck body furthercomprises first terminals disposed on the bottom surface of the chuckbody and coupled with the one or more heating elements, second terminalsdisposed on the bottom surface of the chuck body and coupled with theone or more chucking electrodes, and third terminals disposed on thebottom first surface of the chuck body and coupled with the one or morechucking electrodes.

In one example, a processing region comprises a pedestal assemblyconfigured to move between a loading position and a processing position.The pedestal assembly comprises a substrate support comprising firstpins coupled to a first power supply and second pins coupled to a secondpower supply. The processing region further comprises an electrostaticchuck comprising a chuck body, first terminals, second terminals, andthird terminals. The chuck body has a top surface configured to supporta substrate and a bottom surface opposite the top surface. The chuckbody is configured to be supported by the substrate support andcomprises one or more chucking electrodes, and one or more heatingelements. The first terminals are disposed on the bottom surface of thechuck body and are coupled with the one or more heating elements. Thefirst terminals are configured mate with the first pins of the substratesupport. The second terminals are disposed on the bottom surface of thechuck body and are coupled with the one or more chucking electrodes. Thesecond terminals are configured to mate with the second pins of thesubstrate support. The third terminals are disposed on the bottom firstsurface of the chuck body and are coupled with the one or more chuckingelectrodes.

In one example, a cluster tool assembly comprises a processing region.The processing region comprises a pedestal assembly configured to movebetween a loading position and a processing position. The pedestalassembly comprises a substrate support comprising first pins coupled toa first power supply and second pins coupled to a second power supply.The processing region further comprises an electrostatic chuckcomprising a chuck body, first terminals, second terminals, and thirdterminals. The chuck body has a top surface configured to support asubstrate and a bottom surface opposite the top surface. The chuck bodyis configured to be supported by the substrate support, and comprisesone or more chucking electrodes, and one or more heating elements. Thefirst terminals are disposed on the bottom surface of the chuck body andare coupled with the one or more heating elements. The first terminalsare configured mate with the first pins of the substrate support. Thesecond terminals are disposed on the bottom surface of the chuck bodyand are coupled with the one or more chucking electrodes. The secondterminals are configured to mate with the second pins of the substratesupport. The third terminals are disposed on the bottom first surface ofthe chuck body and are coupled with the one or more chucking electrodes.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentdisclosure can be understood in detail, a more particular description ofthe disclosure, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlyexemplary embodiments and are therefore not to be considered limiting ofits scope, may admit to other equally effective embodiments.

FIG. 1 is a plan view of a cluster tool assembly according to one ormore embodiments.

FIG. 2 is a side view of an electrostatic chuck, according to one ormore embodiments.

FIG. 3A is bottom view of an electrostatic chuck, according to one ormore embodiments.

FIG. 3B is a top isometric view of an electrostatic chuck, according toone or more embodiments.

FIGS. 4, 5, 6, 7, and 8 are example terminals, according to one or moreembodiments.

FIG. 9 is an example centering element, according to one or moreembodiments.

FIG. 10 is a side cross-sectional view of an electrostatic chuck,according to one or more embodiments.

FIGS. 11 and 12 are side cross-sectional views of a processing chamber,according to one or more embodiments.

FIG. 13 is a plan view of a substrate support, according to one or moreembodiments.

FIG. 14 is a plan view of a centering element and an alignment element,according to one or more embodiments.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements and features of oneembodiment may be beneficially incorporated in other embodiments withoutfurther recitation.

DETAILED DESCRIPTION

Before describing several exemplary embodiments of the apparatus andmethods, it is to be understood that the disclosure is not limited tothe details of construction or process steps set forth in the followingdescription. It is envisioned that some embodiments of the presentdisclosure may be combined with other embodiments. Aspects of thedisclosure provided herein generally provide a substrate processingsystem that includes at least one processing module that includes aplurality of processing regions coupled thereto and a substratetransferring device disposed within a transfer region of the processingmodule for transferring a plurality of substrates to two or more of theplurality of processing regions. The methods and apparatuses disclosedherein are useful for performing vacuum processing on substrates whereinone or more substrates are transferred within the transfer region ofprocessing module that is in direct communication with at least aportion of a processing region of a plurality of separately isolatableprocessing regions during the process of transferring the one or moresubstrates. In some embodiments, a substrate is positioned andmaintained on the same substrate support member (hereafter electrostaticchuck) during the process of transferring the substrate within theprocessing module and while the substrate is being processed in each ofthe plurality of processing regions.

In the substrate processing system, or cluster tool assembly 100, bothan electrostatic chuck and a substrate are transferred betweenprocessing chambers of the cluster tool assembly 100. As is discussedfurther below, when the electrostatic chuck and substrate aretransferred between processing chambers, the terminals of theelectrostatic chuck mate with pins of a substrate support to allow anelectrical connection to be formed therebetween. The pins of thesubstrate support provide power signals to the terminals of theelectrostatic chuck. As is discussed further below, in some embodiments,the pins of the substrate support are configured to support a portion ofthe weight of the electrostatic chuck to ensure that the electricalconnection between the pins of the substrate support and the terminalsof the electrostatic chuck allows power signals to be repeatedly andreliably transferred.

One or more embodiments of the present disclosure are directed towardsan apparatus for substrate processing and a cluster tool assembly 100including a transfer apparatus and a plurality of processing regions.The transfer apparatus is configured as a carousel in some embodiments,and the processing regions may include facilities to enable atomic layerdeposition (ALD), chemical vapor deposition (CVD), physical vapordeposition (PVD), etch, cleaning, heating, annealing, and/or polishingprocesses. Other processing platforms may also be used with the presentdisclosure at the discretion of a user. The present disclosure isgenerally meant to provide a substrate processing tool with highthroughput, increased adaptability, and a smaller footprint.

FIG. 1 is a plan view of a cluster tool assembly 100 with a singletransfer chamber assembly 150. The cluster tool assembly 100 includes aplurality of load lock chambers 130 adjacent to a Factory Interface (FI)120, a plurality of robot chambers 180 adjacent to the plurality of loadlock chambers 130, a plurality of prep chambers 190 adjacent to theplurality of robot chambers 180, and the transfer chamber assembly 150adjacent to the plurality of robot chambers 180. The load lock chambers130 of the cluster tool assembly 100 are typically coupled to aplurality of Front Opening Unified Pods (FOUPs) 110 by the FI 120adjacent to the FOUPs 110.

The plurality of FOUPs 110 may be utilized to safely secure and storesubstrates as the substrates are moved between different machines. Theplurality of FOUPs 110 may vary in quantity depending upon the processand throughput of the system. The FI 120 is disposed between theplurality of FOUPs 110 and the plurality of load lock chambers 130. TheFI 120 creates an interface between the factory and the cluster toolassembly 100. The plurality of load lock chambers 130 are connected tothe FI 120 by first valves 125, such that a substrate may be transferredfrom the FI 120 to the plurality of load lock chambers 130 through thefirst valves 125 and from the plurality of load lock chambers 130 to theFI 120. As shown, the first valves 125 are on one wall of the load lockchambers 130. In some embodiments, the first valves 125 are fluidisolation valves and may form a seal between the FI 120 and the loadlock chambers 130. This seal may keep outside contaminants from enteringthe cluster tool assembly 100. The load lock chambers 130 also comprisea second valve 135 on an opposite wall from the first valve 125. Thesecond valve 135 interfaces the load lock chambers 130 with the robotchambers 180.

The transfer chamber assembly 150 includes a central transfer apparatus145 and a plurality of processing regions 160. The plurality ofprocessing regions 160 are disposed around the central transferapparatus 145, such that the plurality of processing regions 160 aredisposed radially outward of the central transfer apparatus 145 in thetransfer chamber assembly 150.

As shown, the robot chambers 180 are on one side of the load lockchambers 130, such that the load lock chambers 130 are between the FI120 and the robot chambers 180. The robot chambers 180 include atransfer robot 185. The transfer robot 185 may be any robot suitable totransfer one or more substrates from one chamber to another. Thetransfer robot 185 is utilized to transfer substrates 186 to anelectrostatic chuck (e.g., electrostatic chuck) 187 that is temporarilyconnected to the central transfer apparatus 145. The connection betweenthe electrostatic chuck 187 and the central transfer apparatus 145 isdescribed below in more detail. The electrostatic chuck 187 holds asingle substrate 186 and travels with the substrate 186 into each of theprocessing regions 160. The electrostatic chuck 187, when in one of theprocessing regions 160 (with a substrate thereon), forms a boundary ofthe processing region 160. The substrates 186 are mated with one ofelectrostatic chucks 187, and the substrate 186 moves in and between theprocessing regions 160 on that electrostatic chuck 187.

In some embodiments, the transfer robot 185 is configured to transportsubstrates 186 from the load lock chambers 130 and into the plurality ofprep chambers 190. The transfer robot 185 removes the substrate 186 fromthe load lock chambers 130, moves the substrate 186 into the robotchamber 180, and then moves the substrate 186 into the prep chamber 190.The transfer robot 185 is also configured to move substrates 186 to thetransfer chamber assembly 150. Similarly to how the substrate 186 may bemoved to the prep chambers 190 from the load lock chambers 130 by thetransfer robot 185, the substrate 186 may also be moved from the prepchamber 190 to the load lock chambers 130 by the transfer robot 185. Thetransfer robot 185 may also move substrates 186 from the transferchamber assembly 150 to the prep chambers 190 or the load lock chambers130. In some alternative embodiments, the transfer robot 185 may move asubstrate 186 from the load lock chambers 130, move the substrate 186into the robot chamber 180, and then move the substrate 186 into thetransfer chamber assembly 150. In this alternative embodiment, thesubstrate 186 may not enter the prep chamber 190 either beforeprocessing in the transfer chamber assembly 150 or after processing inthe transfer chamber assembly 150.

The prep chambers 190 include a cleaning chamber 192, a packagingstructure 194, and a cleaning chamber vacuum pump 196. The cleaningchamber 192 may be any one of a pre-clean chamber, an anneal chamber, ora cool down chamber, depending upon the desired process within thecluster tool assembly 100. In some embodiments, the cleaning chamber 192is a wet clean chamber. In other embodiments, the cleaning chamber 192is a plasma clean chamber. In yet other exemplary embodiments, thecleaning chamber 192 is a Preclean II chamber available from AppliedMaterials, Inc., of Santa Clara, Calif.

The packaging structure 194 may be a structural support for the cleaningchamber 192. The packaging structure 194 may include a sub-transferchamber (not shown), a gas supply (not shown), and an exhaust port (notshown). The packaging structure 194 may provide the structure around thecleaning chamber 192 and interface the cleaning chamber 192 to the robotchamber 180. The cleaning chamber vacuum pump 196 is disposed adjacentto a wall of the cleaning chamber 192 and provides control of thepressure within the cleaning chamber 192. One cleaning chamber vacuumpump 196 may be adjacent to each of the cleaning chambers 192. Thecleaning chamber vacuum pump 196 may be configured to provide a pressurechange to the cleaning chamber 192. In some embodiments, the cleaningchamber vacuum pump 196 is configured to increase the pressure of thecleaning chamber 192. In other embodiments, the cleaning chamber vacuumpump 196 is configured to decrease the pressure of the cleaning chamber192, such as to create a vacuum within the cleaning chamber 192. In yetother embodiments, the cleaning chamber vacuum pump 196 is configured toboth increase and decrease the pressure of the cleaning chamber 192depending on the process being utilized within the cluster tool assembly100. The cleaning chamber vacuum pump 196 may be held in place by thepackaging structure 194, such that the packaging structure 194 at leastpartially surrounds the cleaning chamber vacuum pump 196.

The load lock chambers 130, robot chambers 180, and prep chambers 190may be arranged to reduce the footprint required for the cluster toolassembly 100. In one embodiment, one load lock chamber 130 is attachedto a first wall of the robot chamber 180. One prep chamber 190 isattached to a second wall of the robot chamber 180. The first and secondwalls may be adjacent walls on the robot chamber 180. In someembodiments, the robot chamber 180 is roughly square shaped. In otherembodiments, the robot chamber 180 is a quadrilateral. In yet otherembodiments, the robot chambers 180 may be any desired shape, such as apolygon or a round shape, such as a circle. In an embodiment where therobot chambers 180 are a square or quadrilateral shape, the first walland the second wall may be adjacent walls, such that the two wallsintersect each other. As shown in FIG. 1, the cluster tool assembly 100includes two load lock chambers 130, two robot chambers 180, and twocleaning chambers 190. The two load lock chambers 130, two robotchambers 180, and two cleaning chambers 190, when arranged as describedabove, form two transport assemblies. The two transport assemblies arespaced apart from each other and form mirror images of one another, suchthat the prep chambers 190 are on opposite walls of their respectiverobot chambers 180.

As shown, the transfer chamber assembly 150 is adjacent to the robotchambers 180, such that the transfer chamber assembly 150 is connectedto the robot chambers 180 by a valve (not shown). The transfer chamberassembly 150 may be attached to a third wall of the robot chambers 180.The third wall of the robot chambers 180 may be opposite the first wallof the robot chambers 180.

A chamber pump 165 is disposed adjacent to each of the processingregions 160, such that a plurality of chamber pumps 165 are disposedaround the central transfer apparatus 145. The plurality of chamberpumps 165 may also be disposed radially outward of the central transferapparatus 145 in the transfer chamber assembly 150. One chamber pump 165for each of the processing regions 160, such that one chamber pump 165is connected to each of the processing regions 160 is provided. In someembodiments, multiple chamber pumps 165 per processing region 160 areprovided. In yet other embodiments, a processing region 160 may not havea chamber pump 165. There may be a varying number of chamber pumps 165per processing region 160, such that one or more processing regions 160may have a different number of chamber pumps 165 than a separate set ofprocessing regions 160. In some embodiments, the chamber pumps 165 areconfigured to increase the pressure of the processing region 160. Inother embodiments, the chamber pumps 196 are configured to decrease thepressure of the processing region 160, such as to create a vacuum withinthe processing region 160. In yet other embodiments, the chamber pumps165 are configured to both increase and decrease the pressure of theprocessing regions 160 depending on the process being utilized withinthe cluster tool assembly 100.

In the embodiment shown in FIG. 1, the transfer chamber assembly 150includes six processing regions 160. In one embodiment, the transferchamber assembly 150 includes a single processing region 160. In anotherembodiment, two or processing regions 160 are provided. In someembodiments two to twelve processing regions 160 are within the transferchamber assembly 150. In other embodiments, four to eight processingregions 160 are within the transfer chamber assembly 150. The number ofprocessing regions 160 impacts the total footprint of the cluster toolassembly 100, the number of possible process steps capable of beingperformed by the cluster tool assembly 100, the total fabrication costof the cluster tool, and the throughput of the cluster tool assembly100.

The plurality of processing regions 160 can be any one of PVD, CVD, ALD,etch, cleaning, heating, annealing, and/or polishing platforms. In someembodiments, the plurality of processing regions 160 can all be similarplatforms. In other embodiments, the plurality of processing regions 160can include two or more types of processing platforms. In one exemplaryembodiment, all of the plurality of processing regions 160 are PVDprocess chambers. In another exemplary embodiment, the plurality ofprocessing regions 160 includes both PVD and CVD process chambers. Otherembodiments of the makeup of the plurality of processing regions 160 areenvisioned. The plurality of processing regions 160 can be altered tomatch the types of process chambers needed to complete a process.

The central transfer apparatus 145 is disposed in the center of thetransfer chamber assembly 150, such that the central transfer apparatus145 is disposed around a central axis of the transfer chamber assembly150. The central transfer apparatus 145, may be any suitable transferdevice. The central transfer apparatus 145 is configured to transport asubstrate 186 on an electrostatic chuck 187 to and from each of theprocessing regions 160. In one embodiment, the central transferapparatus 145 is configured as a carousel system having one or moretransfer arms (e.g., the transfer arm 1110 of FIG. 11). Each transferarm supports a corresponding electrostatic chuck 187 and substrate 186as the electrostatic chucks 187 and the substrates 186 transferredbetween processing regions 160. The transfer arms provide one or morepower signals to the electrostatic chuck 187 to power heating elements(e.g., heating elements 272 of FIG. 2) and/or chucking electrodes (e.g.,chucking electrodes 270 of FIG. 2).

FIG. 2 illustrates a cross-sectional side view of the electrostaticchuck 187 and the substrate 186, according to one or more embodiments.The electrostatic chuck 187 includes a body (e.g., chuck body) 188,terminals 212, terminals 214, terminals 216, and centering elements 218.The body 188 includes a top surface 231 configured to support thesubstrate 186. The body 188 includes a bottom surface 230 that isopposite the top surface 231. The terminals 212, 214, and 216 and thecentering elements 218 are disposed on the bottom surface 230. The body188 of the electrostatic chuck 187 additionally includes a passageway(i.e., aperture) 210, one or more chucking electrodes 270, and one ormore heating elements 272.

The one or more chucking electrodes 270 may include a single chuckingelectrode 270. Alternatively, the one or more chucking electrodes 270includes two or more chucking electrodes (e.g., the chucking electrodes270 a and 270 b). In embodiments where the one or more chuckingelectrode 270 includes two or more chucking electrodes, the chuckingelectrodes are interdigitated with each other. Alternatively, thechucking electrodes 270 are not interdigitated with each other. Thechucking electrodes 270 may be co-planer. Alternatively, the chuckingelectrodes 270 may be disposed in different layers within theelectrostatic chuck 187 such that one chucking electrode 270 is closerto the top surface 231 than another chucking electrode 270.

The terminals 212 and 216 are electrically coupled to the one or morechucking electrodes 270. A first one of the terminals 212 and 216 may becoupled to a first chucking electrode 270 and a second one of theterminals 212 and 216 may be coupled to a second chucking electrode 270.For example, a first one of the terminals 212 and 216 is coupled to thechucking electrode 270 a and a second one of the terminals 212 and 216is coupled to the chucking electrode 270 b. As shown, one or more of theterminals 212 and one or more of the terminals 216 are coupled to acommon chucking electrode 270. For example, a first one of the terminals212 and a first one of the terminals 216 are coupled to the chuckingelectrode 270 a and a second one of the terminals 214 and a second oneof the terminals 216 are coupled to the chucking electrode 270 b.

The terminals 214 are electrically coupled to the heating elements 272.The heating elements 272 are resistive heating elements. Alternatively,the heating elements 272 are other types of heating elements. A firstone of the terminals 214 may be coupled to a first one of the heatingelements 272 and a second one of the terminals 214 may be coupled to asecond one of the heating elements 272. In one embodiment, each of theterminals 214 is coupled to a common heating element 272.

The body 188 of the electrostatic chuck 187 may be formed from a singlepiece of a material. Alternatively, the body 188 of the electrostaticchuck 187 is formed from multiple layers of a common material ordifferent materials. For example, the electrostatic chuck 187 includesregions (e.g., stepped regions) 260, 262 and 264. The one or moreregions 260, 262, and 264 may be separate pieces that are adheredtogether. Alternatively, two or more of the regions 260, 262, and 264are formed from a common piece of material.

FIG. 3A illustrates a bottom plane view and FIG. 3B illustrates a topisometric view of the electrostatic chuck 187, according to one or moreembodiments. As illustrated, the electrostatic chuck 187 includes threeterminals 212. In other embodiments, the electrostatic chuck 187includes more or less than three terminals 212. The terminals 212 may bepositioned such that each of the terminals 212 is an equal distance fromeach other. Alternatively, the distance between a first two of theterminals 212 may differ from the distance between a second two of theterminals 212. Further, the terminals may be positioned such that eachof the terminals 212 is an equal distance from the center point 232 ofthe electrostatic chuck 187. Alternatively, the distance between two ormore of the terminals 212 and the center point 232 may be different.

Further, the electrostatic chuck 187 includes three terminals 214. Inother embodiments, the electrostatic chuck 187 includes more or lessthan three terminals 214. The terminals 214 may be positioned such thateach of the terminals 214 is an equal distance from each other.Alternatively, a distance between a first two of the terminals 214 isdifferent than a distance between a second two of the terminals 214.Additionally, or alternatively, the terminals 214 may be positioned suchthat each of the terminals 214 is an equal distance from the centerpoint 232. Alternatively, the distance between two or more of theterminals 212 and the center point 232 may be different.

The distance between each of the terminals 214 may be less than thedistance between each of the terminals 212. Additionally, the distancebetween each of the terminals 214 and the center point 232 may be lessthan the distance between each of the terminals 212 and the center point232. Further, the terminals 212 are closer to the edge 239 of theelectrostatic chuck 187 than the terminals 214.

The electrostatic chuck 187 includes two terminals 216. In oneembodiment, the electrostatic chuck 187 includes more than two terminals216. The terminals 216 may be positioned such that each of the terminals216 is an equal distance from the center point 232. Alternatively, thedistance between each of the terminals 216 and the center point 232 maybe different. The terminals 216 are closer to the center point 232 thanthe terminals 212. The terminals 212 are closer to the edge 239 of theelectrostatic chuck 187 than the terminals 216.

The terminals 212, 214, and 216 are removably or non-removably attachedto the bottom surface 230 of the electrostatic chuck 187. For example,one or more of the terminals 212, 214, and 216 may be attached to andremoved from the bottom surface 230 of the electrostatic chuck 187. Inone embodiment, each of the terminals 212, 214, and 216 is removablyattached to the bottom surface 230 of the electrostatic chuck 187.Alternatively, one or more of the terminals 212, 214, and 216 isnon-removably attached to the bottom surface 230 of the electrostaticchuck 187. For example, one or more of the terminals 212, 214, and 216are attached to the bottom surface 230 of the electrostatic chuck 187such that the terminals 212, 214, and 216 cannot be removed from thebottom surface 230 of the electrostatic chuck 187 without damaging theelectrostatic chuck 187 or the terminals 212, 214, and 216. In one ormore embodiments, a first one or more of the terminals 212, 214, and 216is removably attached to the bottom surface 230 of the electrostaticchuck 187 and a second one or more of the terminals 212, 214, and 216 isnon-removably attached to the bottom surface 230 of the electrostaticchuck 187.

With further reference to FIG. 2 and FIG. 3B, the electrostatic chuck187 includes regions (or steps) 260, 262, and 264. The electrostaticchuck 187 includes region 260 associated with a top region (e.g., topstep) and the top surface 231 of the electrostatic chuck 187, region 262associated with a middle region (e.g., middle step) of the electrostaticchuck 187, and region 264 associated with a bottom region (e.g., bottomstep) and the bottom surface 230 of the electrostatic chuck 187. Theregion 260 is closer to the top surface 231 of the electrostatic chuck187 than the regions 262 and 264. Further, the region 264 is closer tothe bottom surface 230 of the electrostatic chuck 187 than the regions260 and 262.

The electrostatic chuck 187 has an outer diameter 244 in a range ofabout 340 mm to about 375 mm. Alternatively, the outer diameter 244 isless than about 340 mm or greater than 375 mm. In one embodiment, theelectrostatic chuck 187 has an outer diameter 244 of about 360 mm. Inanother embodiment, the electrostatic chuck 187 has an outer diameter244 of about 365 mm. The outer diameter 244 is associated with region264 of the electrostatic chuck 187.

The electrostatic chuck 187 has a first inner diameter 242. The firstinner diameter 242 is in a range of about 315 mm to about 330 mm.Alternatively, the first inner diameter 242 is less than about 315 mm orgreater than about 330 mm. In one embodiment, the first inner diameter242 is about 294 mm. The first inner diameter 242 is associated withregion 262 of the electrostatic chuck 187.

The electrostatic chuck 187 further has a second inner diameter 240. Thesecond inner diameter 240 is in a range of about 280 mm to about 310 mm.Alternatively, the second inner diameter 240 is less than about 280 mmor greater than about 310 mm. In one embodiment, the second innerdiameter 240 is about 294 mm. Further, the second inner diameter 240 isassociated with the region 260 of the electrostatic chuck 187.

The height 250 of the electrostatic chuck 187 is in a range of about 12mm to about 18 mm. Alternatively, the height 250 may be less than 12 mmor greater than 18 mm. In one embodiment, the height 250 is about 12.5mm. In another embodiment, the height 250 is about 15.24 mm. In yetanother embodiment, the height 250 is about 17.78 mm. The height 250corresponds to a total height of the electrostatic chuck 187.

The height 252 of the electrostatic chuck 187 is in a range of about 10mm to about 13 mm. Alternatively, the height 252 may be less than 10 mmor greater than 13 mm. In one embodiment, the height 252 is about 11 mm.In another embodiment, the height 252 is 12.7 mm. The height 252corresponds to the combined height of regions 262 and 260 of theelectrostatic chuck 187.

The height 254 of the electrostatic chuck 187 is in a range of about 5mm to about 7 mm. Alternatively, the height 254 is less than about 5 mmor greater than about 7 mm. In one embodiment, the height 252 is about 6mm. The height 254 corresponds to the height of region 260 of theelectrostatic chuck 187.

FIG. 4 illustrates an example terminal 400, according to one or moreembodiments. One or more of the terminals 212, 214 and 216 may beconfigured similar to that of the terminal 400. The surface (e.g.,mating surface) of the terminal 400 is groove shaped (e.g., the matingsurface is grooved) and includes groove 410. The groove 410 has a depthof 412 from the surface 414 of the terminal 400 in the +Y direction.

FIG. 5 illustrates an example terminal 500, according to one or moreembodiments. One or more of the terminals 212, 214 and 216 may beconfigured similar to that of the terminal 500. The surface (e.g.,mating surface) of the terminal 500 is concave shaped including concavearea 510. The concave 410 has a depth of 512 from the surface 514 of theterminal 500 in the +Y direction.

FIG. 6 illustrates an example terminal 600, according to one or moreembodiments. One or more of the terminals 212, 214 and 216 may beconfigured similar to that of the terminal 600. The terminal 600includes the surface (e.g., mating surface) 610. The surface 610 issubstantially flat having a flat shape. For example, the surface 610 isnot convex or concave and does not substantially deviate and issubstantially uniform in the +Y or −Y direction.

FIG. 7 illustrates an example terminal 700, according to one or moreembodiments. One or more of the terminals 212, 214 and 216 may beconfigured similar to that of the terminal 700. The surface (e.g.,mating surface) of the terminal 700 has a convex shape including theconvex portion 710. The convex portion 710 has a radius of about 5 mm toabout 20 mm. Alternatively, the convex portion 710 may have a radius ofless than 5 mm or greater than 20 mm.

FIG. 8 illustrates an example terminal 800, according to one or moreembodiments. One or more of the terminals 212, 214 and 216 may beconfigured similar to that of the terminal 800. The surface (e.g.,mating surface) of the terminal 800 has a convex shape including theconvex portion 810. The convex portion 810 has a radius of about 5 mm toabout 20 mm. Alternatively, the convex portion 810 may have a radius ofless than 5 mm or greater than 20 mm. Further, the convex portion 810includes a flat portion 812.

The terminals 400, 500, 600, 700, and/or 800 may be comprised ofmolydbenum (Mo) or tungsten (W), or a combination thereof.Alternatively, the terminals 400, 500, 600, 700, and/or 800 may becomprised of a material other than Mo or W, or a combination ofmaterials including or not including Mo and W. Further, the terminals400, 500, 600, 700, and/or 800 has a surface roughness in a range ofabout 2 Ra to about 6 Ra. Alternatively, the terminals 400, 500, 600,700, and/or 800 may have a surface roughness of less than 2 Ra orgreater than about 6 Ra.

The temperature range of the processing volume 1160 is in a range ofabout 25 degrees Celsius to about 500 degrees Celsius. At highertemperatures, Mo and W resist oxidization, increasing the electricalcontact between corresponding pins and terminals.

With further reference to FIG. 3A, the electrostatic chuck 187 includesthree centering elements 218. In other embodiments, the electrostaticchuck 187 includes more or less than three center elements 218. Thecentering elements 218 may each be an equal distance from the centerpoint 232. Alternatively, a distance between two or more of thecentering elements 218 and the center point 232 may be different.Further, the distance between each of the centering elements 218 is thesame (e.g., within manufacturing tolerances of each other).Alternatively, the distance between a first two of the centeringelements 218 differs from the distance between second two of thecentering elements 218.

The centering elements 218 are further from the edge 239 than theterminals 212. Further, the centering elements 218 may be further fromthe edge 239 than the terminals 214 and/or 216.

FIG. 9 illustrates a centering element 218 a, according to one or moreembodiments. The center element 218 a includes slot 900. Each of thecentering elements 218 may be configured similar to that of thecentering element 218 a of FIG. 9.

With further reference to FIG. 3A and FIG. 3B, the electrostatic chuck187 further includes loading pin holes 220. The electrostatic chuck 187includes at least three loading pins holes 220. Alternatively, theelectrostatic chuck 187 includes less than three loading pin holes 220or more than three loading pin holes 220. In some embodiments, theelectrostatic chuck 187 does not have any loading pin holes 220.

A loading pin may pass through each of the loading pin holes 220 toreceive the substrate 186 or remove the substrate 186 from theelectrostatic chuck 187. The loading pin may be part of the robotchamber 180 configured to electrically chuck the substrate 186 with theelectrostatic chuck 187 or de-chuck the substrate 186 from theelectrostatic chuck 187.

As shown in FIG. 3B, the region 260 includes the top surface 231 and theregion 264 includes the bottom surface 230. Further, the loading pinsholes 220 are recessed (e.g., counter bored or countersunk).

FIG. 10 illustrates the electrostatic chuck 1087, according to one ormore embodiments. The electrostatic chuck 1087 is configured similar tothat of the electrostatic chuck 187. For example, the electrostaticchuck 1087 includes the terminals 212, the terminals 214, the terminals216, the centering elements 218, the passageway 210, the one or morechucking electrodes 270, and the heating elements 272. However, ascompared to the electrostatic chuck 187, the electrostatic chuck 1087includes a recessed portion 1020. The recessed portion 1020 is locatedalong the bottom surface 1030 of the electrostatic chuck 187.

The recessed portion 1020 provides additional surface area (e.g., 264)for forming the separable seal with the sealing assembly 1135 of FIG.11). Further, as the effects of the heating elements 272 on the region264 differ from regions that are closer in proximity to the heatingelements 272, the region 264 reduces thermal impacts on a correspondingsubstrate 186. Additionally, or alternatively, the recessed portion 1020functions to aid in preventing the electrostatic chuck 187 from moving(e.g., sliding) relative to a transfer arm (e.g., the transfer arm 1110of FIG. 11) and/or a substrate support (e.g., the substrate 1126 of FIG.11) during rotation, and/or when any other motion is applied to theelectrostatic chuck 187. The recessed portion 1020 also protects theterminals 212, 214, and 216, and other electrical and hardwarecomponents from damage during processing of a substrate 186.

As shown in FIGS. 11 and 12, a processing region 160 is serviced via thecentral transfer apparatus (e.g., central transfer apparatus 145) totransfer electrostatic chucks (e.g., the electrostatic chuck 187) andsubstrates (e.g., the substrate 186) into and out of the processingregion 160. A substrate transfer opening 1104 extends inwardly of theouter surface of a circumferential wall of the processing region 160 andinto the transfer region 1101 of the processing region 160. The transferopening 1104 allows the transfer robot 185, to transfer the substrate186 into and out of the transfer region 1101. In various embodiments,the transfer opening 1104 may be omitted. For example, in embodimentswhere the processing region 160 does not interface with the transferrobot 185, the transfer opening 1104 may be omitted.

A source assembly 1170 of the processing region 160 is configured toperform a deposition process (e.g., a PVD deposition process or thelike). In this configuration, the source assembly 1170 includes a target1172, a magnetron assembly 1171, a source assembly wall 1173, a lid1174, and a sputtering power supply 1175. The magnetron assembly 1171includes a magnetron region 1179 in which a magnetron 1171A is rotatedby use of a magnetron rotation motor 1176 during processing. The target1172 and magnetron assembly 1171 are typically cooled by the delivery ofa cooling fluid (e.g., DI water) to the magnetron region 1179 from afluid recirculation device (not shown). The magnetron 1171A includes aplurality of magnets 1171B that are configured to generate magneticfields that extends below the lower surface of the target 1172 topromote a sputtering process that is being performed in a processingvolume 1160 during a PVD deposition process.

Alternate configurations of the processing region 160, which are adaptedto perform CVD, PECVD, ALD, PEALD, etch, or thermal processes, thesource assembly 1170 will generally include different hardwarecomponents. In one example, the source assembly 1170 of a processingstation that is adapted to perform a PECVD deposition process or etchprocess will typically include a gas distribution plate, or showerhead,that is configured to deliver a precursor gas or etching gas into theprocessing volume 1160 and across a surface of a substrate disposedwithin the processing region 160 during processing. In this case, themagnetron assembly 1171 and target are not used, and the sputteringpower supply 1175 can be replaced with a RF power supply that isconfigured to bias the gas distribution plate.

A substrate support actuation assembly 1190 includes a pedestal liftassembly 1191 and a pedestal assembly 1124. The pedestal lift assembly1191 includes a lift actuator assembly 1168 and a lift mounting assembly1166, which is coupled to the base 1119 of the processing region 160.During operation the lift actuator assembly 1168 and lift mountingassembly 1166 are configured to position the pedestal assembly 1124 inat least a loading position (or transfer position) (FIG. 11), which ispositioned vertically (Z-direction) below a transfer arm 1110 (i.e.,transfer plane), and a processing position (FIG. 12), which isvertically above the transfer arm (i.e., substrate support arm) 1110.Further, the lift actuator assembly 1168 and the lift mounting assembly1166 apply vertical motion, in the +Z direction, to the pedestalassembly 1124 to lift the electrostatic chuck 187 off of the transferarm 1110. Additionally, the lift actuator assembly 1168 and the liftmounting assembly 1166 apply vertical motion, in the −Z direction, tothe pedestal assembly 1124 to position the electrostatic chuck 187 onthe transfer arm 1110. Pins 1153 of the transfer arm 1110 mate with theterminals 212 of the electrostatic chuck 187. The pins 1153 are coupledto the power supply 1156 which provided DC power supply signals to thepins 1153. The pins 1153 couple the DC power supply signals to theterminals 212 to drive the chucking electrodes 270. A first DC powersupply signal may be provided to a first one of the pins 1153 and asecond DC power supply signal may be provided to a second one of thepins 1153. The DC power supply signals have a similar magnitude butdiffer in polarity. For example, one of the DC power supply signal has apositive polarity and one of the DC power supply signals has a negativepolarity. When the pins 1153 are mated with the terminals 212, the DCpower supply signals provided to the chucking electrodes 270 generate anelectrostatic chucking force that holds the substrate 186 against thesurface of the electrostatic chuck 187. According, the electrostaticchuck 187 and the substrate 186 are transferred together by the transferarm between processing regions 160 and the substrate 186 does not moverelative to the electrostatic chuck 187. Further, one or more of thepins 1153 may be configured to mate with one or more terminals 214. Insuch an instance one or more of the pins 1153 is coupled to the powersupply 1158 which provides AC power signals to one or more of the pins1153. The AC power signals are coupled to the heating elements 272 viathe pins 1153 and the terminals 214 to drive the heating elements 272while the electrostatic chuck 187 and substrate 186 are supported by thetransfer arm 1110 and transferred between processing regions 160.Accordingly, the electrostatic chuck 187 may control the temperature ofthe substrate 186 as the electrostatic chuck 187 and the substrate 186are transferred between processing regions 160.

The lift actuator assembly 1168 is coupled to a pedestal shaft 1192,which is supported by bearings (not shown) that are coupled to the base1119 to guide the pedestal shaft 1192 as it is translated by the liftactuator assembly 1168. A bellows assembly (not shown) is used to form aseal between the outer diameter of the pedestal shaft 1192 and a portionof the base 1119, such that a vacuum environment created within thetransfer region 1101 by use of a pump 1154 is maintained during normaloperation.

The pedestal assembly 1124 includes a substrate support 1126 that iscoupled to the pedestal shaft 1192. The pedestal assembly 1124 includesa heater power source 1195, an electrostatic chuck power source 1196 anda backside gas source 1197. The substrate support 1126 supports theelectrostatic chuck 187 and the substrate 186 within the processingregion 160.

The substrate support 1126 comprises pins 1140 and 1142. The pins 1140are coupled to the heater power source 1195. The pedestal assembly 1124includes two or more pins 1140. Further, the pins 1140 are configured tomate (e.g., physically and electrically couple) with the terminals 214of the electrostatic chuck 187. The heater power source 1195 provides anAC power signal or signals. The heater power source 1195 provides an ACpower signal having a current in a range of about 20 A to about 30 A tothe pins 1140 which is provided to the heating elements (e.g., heatingelements 272 of FIG. 2) via the terminals 214 when the pins 1140 aremated with the terminals 214. In other embodiments, the heater powersource 1195 provides an AC power signal having a current of less than 20A or greater than 30 A.

The pins 1142 of the substrate support 1126 mate with the terminals 216of the electrostatic chuck 187. The substrate support 1126 includes twoor more pins 1142. In such embodiments, each of the pins 1142 isconfigured to couple to a different one of the terminals 216. Forexample, a first one of the pins 1142 is configured to couple to a firstone of the terminals 216 and a second of the pins 1142 is configured tocouple to a second one of the terminals 216. The pins 1142 are coupledto the electrostatic chuck power source 1196.

The electrostatic chuck power source 1196 provides DC power signals tothe pins 1142. The pins 1142 couple the DC power signals to theterminals 216 and to the chucking electrodes 270 when the pins 1142 aremated with the terminals 216 to electrically chuck the substrate 186 tothe electrostatic chuck 187. In one embodiment, the electrostatic chuckpower source 1196 provides a positive DC power signal to a first one ofthe pins 1142 and a negative DC power signal to a second one of the pins1142 to electrically chuck the substrate 186 to the electrostatic chuck187. The DC power signals drive the pins 1142, the terminals 216, andthe chucking electrodes 270 in a bi-polar configuration such that afirst DC power signal is positive and a second DC power signal isnegative. The magnitudes of the DC power signals may be the same. Forexample, the first DC power signal is about 1500 V and the second DCpower signal is about −1500 V. Alternatively, the DC power signals havea magnitude greater than or less than about 1500 V. In otherembodiments, the magnitude of a first one of the DC power signalsdiffers from the magnitude of a second one of the DC power signals.

The pins 1140 and 1142 are removably coupled or non-removably (orpermanently) coupled to the pedestal assembly 1124. For example, in oneembodiment, the pins 1140 and/or 1142 are removably coupled and may beattached and removed from the pedestal assembly 1124 such that the pins1140 and/or 1142 may be replaced without damaging the pedestal assembly1124. The contact between the pins 1140 and 1142 and the terminals 214and 216 causes wear to the pins 1140 and 1142. Over time, the pins 1140and 1142 may need to be replaced. Removably coupling the pins 1140 and1142 to the pedestal assembly 1124 allows the pins 1140 and 1142 to beremoved and replaced when wear affects the operation of the pins 1140and/or 1142 and degrades the coupling between the pins 1140, 1142 andthe terminals 214, 216.

The pedestal assembly 1124 includes flexible element 1180. The flexibleelement 1180 includes a passageway 1182 and bellows 1184. The flexibleelement 1180 is configured to generate a seal against a bottom surfaceof the electrostatic chuck 187. A backside gas is provided via thebackside gas source 1197 to the passageway 1182 of the flexible element1180. The backside gas flows through the passageway 1182 into the spacebetween the substrate 186 and the electrostatic chuck 187 to improve theuniformity of the thermal conductivity between the substrate 186 and theelectrostatic chuck 187, improving the uniformity of the deposition ofmaterials onto the substrate 186. The backside gas is nitrogen, helium,or argon, among others.

A process kit assembly 1130 generally includes a process region shield1132 and a sealing assembly 1135. A station wall 1134 includes a firstport that is coupled to a vacuum pump 1165 and is configured to evacuatethe processing volume 1160 through a circumferential gap formed betweenan upper portion of the process region shield 1132, lower surface of thetarget 1172, and portion of the isolation ring 1133 and station wall1134 during processing. The station wall 1134 is coupled to a gas sourceassembly 1189, and is configured to deliver one or more process gases(e.g., Ar, N₂) to the processing volume 1160 through a circumferentialplenum during processing.

During processing of a substrate, e.g., FIG. 12, the substrate 186 andthe electrostatic chuck 187 are positioned in a processing positionbelow the source assembly 1170. When in the processing position theregion 264 of the electrostatic chuck 187 forms a “seal” with a portionof the sealing assembly 1135 so as to substantially fluidly isolate theprocessing volume 1160 from the transfer region 1101. Thus, in theprocessing volume 1160, the electrostatic chuck 187, the sealingassembly 1135, the process region shield 1132, the station wall 1134,the isolation ring 1133 and target 1172 substantially enclose and definethe processing volume 1160. The sealing assembly 1135 includes an upperplate 1135 a, a bellows 1335 b, and a lower plate 1135 c. In someembodiments, the “seal” formed between the portion of the electrostaticchuck 187 and an upper plate 1135 a of the sealing assembly 1135 iscreated at a sealing region that is formed by physical contact between asurface of the region 264 of the electrostatic chuck 187 and a surfaceof the upper plate 1135 a. In some embodiments, a flexible bellowsassembly 1135 b of the sealing assembly 1135 is configured to beextended in the vertical direction as the portion of the electrostaticchuck 187 is placed in contact with the surface of the portion of thesealing assembly 1135 by use of the lift actuator assembly 1168 in thesubstrate support actuation assembly 1190. The compliant nature of theflexible bellows assembly allows any misalignment or planaritydifferences between the surface of the portion of the electrostaticchuck 187 and the surface of the portion of the sealing assembly 1135 tobe taken up so that a reliable and repeatable seal can be formed at theregion 264. The flexible bellows assembly 1135 b may be a stainlesssteel bellows assembly or Inconel bellows assembly, among others.Further, a sealing force in a range of about 10 N to 400 N it utilizedto mate one or more of the pins 1140 and/or 1142 with the terminals 214and/or 216, respectively. Using the sealing force increases the amountof current that flows between the pins 1140 and/or 1142 and theterminals 214 and/or 216. The bellows 1135 b may be configured tocontrol the contact force between one or more of the pins 1140 and/or1142 and one or more of the terminals 214 and/or 216. For example, byincreasing or decreasing spring action expansion of the bellows 1135 b,the contact force between respective pairs of the pins 1140, 1142 andthe terminals 214 and 216 may be increased or decreased. Further, theforce applied by the pedestal lift assembly 1191 onto the bellows 1135 bmay be increased or decreased to increase or decrease the contact forcebetween pairs of the pins 1140, 1142 and the terminals 214 and 216. Theforce applied by the pedestal lift assembly 1191 may lift the upperplate 1135 a of the sealing assembly 1135 by about 0.1 inches to about0.4 inches, expanding the bellows 1135 b. In other embodiments, thepedestal lift assembly 1191 may lift the upper plate 1335 a by less than0.1 inches or greater than 0.4 inches to expand the bellows 1135 b. Theamount at which the bellows 1135 b is expanded results in acorresponding contact force between the pins 1140, 1142 and theterminals 214, 216.

FIG. 13 is a top view of the substrate support 1126 of the pedestalassembly 1124, according to one or more embodiments. As illustrated, thesubstrate support 1126 includes alignment elements 1310. The alignmentelements 1310 are configured to interact with the centering elements 218of the electrostatic chuck 187. The alignment elements 1310 aid incentering the electrostatic chuck 187 on the substrate support 1126. Forexample, as illustrated in FIG. 14, an extended region (e.g., the knob)1311 of the alignment element 1310 fits within the slot 900 of thecentering element 218. Fitting the extended region 1311 of eachalignment element 1310 within the slot 900 of each centering element 218centers the electrostatic chuck 187 over the substrate support 1126.

In one embodiment, the substrate support 1126 includes three or morealignment elements 1310. In other embodiments, the substrate support1126 includes two or more alignment elements 1310.

While the foregoing is directed to embodiments of the presentdisclosure, other and further embodiments of the disclosure may bedevised without departing from the basic scope thereof, and the scopethereof is determined by the claims that follow.

What is claimed is:
 1. An electrostatic chuck comprising: a chuck bodyhaving a top surface configured to support a substrate and a bottomsurface opposite the top surface, wherein the chuck body comprises: oneor more chucking electrodes; and one or more heating elements; firstterminals disposed on the bottom surface of the chuck body and coupledwith the one or more heating elements; second terminals disposed on thebottom surface of the chuck body and coupled with the one or morechucking electrodes; and third terminals disposed on the bottom firstsurface of the chuck body and coupled with the one or more chuckingelectrodes.
 2. The electrostatic chuck of claim 1 further comprisingcentering elements disposed on the bottom surface of the chuck body. 3.The electrostatic chuck of claim 1, wherein the chuck body furthercomprises a passageway configured to flow a backside gas between the topsurface of the chuck body and the substrate.
 4. The electrostatic chuckof claim 1, wherein a mating surface of the first terminals, the secondterminals, and the third terminals is flat.
 5. The electrostatic chuckof claim 1, wherein a mating surface of the first terminals, the secondterminals, and the third terminals is one of convex, concave, orgrooved.
 6. The electrostatic chuck of claim 1, wherein the firstterminals, the second terminals, and the third terminals are formed fromone of molydbenum (Mo) and tungsten (W).
 7. The electrostatic chuck ofclaim 1, wherein a number of third terminals is greater than a number ofthe second terminals, and wherein the third terminals are disposedcloser to an outer edge of the electrostatic chuck than the secondterminals.
 8. The electrostatic chuck of claim 1, wherein the firstterminals are configured to interact with first pins of a substratesupport of a processing chamber, and the first pins are coupled to afirst power source configured to output alternating current (AC) powersupply signals.
 9. The electrostatic chuck of claim 8, wherein thesecond terminals are configured to interact with second pins of thesubstrate support, and the second pins are coupled to a second powersupply configured to output direct current (DC) power supply signals.10. The electrostatic chuck of claim 9, wherein a first one of thesecond terminals is coupled to a first chucking electrode of the one ormore chucking electrodes, and a second one of the second terminals iscoupled to a second chucking electrode of the one or more chuckingelectrodes.
 11. The electrostatic chuck of claim 10, wherein the thirdterminals are configured to interact with pins of a transfer arm, andthe pins of the transfer arm are coupled to a third power sourceconfigured to output DC power supply signals.
 12. The electrostaticchuck of claim 11, wherein a first one of the third terminals is coupledto the first chucking electrode, and a second one of the third terminalsis coupled to the second chucking electrode.
 13. The electrostatic chuckof claim 1, wherein the chuck body includes multiple, stepped regionsbetween the top surface and the bottom surface.
 14. The electrostaticchuck of claim 1, wherein a roughness of one or more the firstterminals, the second terminals, and the third terminals is in a rangeof about 2 Ra to about 9 Ra.
 15. A processing region comprising: apedestal assembly configured to move between a loading position and aprocessing position, the pedestal assembly comprising a substratesupport comprising first pins coupled to a first power supply and secondpins coupled to a second power supply; and an electrostatic chuckcomprising: a chuck body having a top surface configured to support asubstrate and a bottom surface opposite the top surface and configuredto be supported by the substrate support, wherein the chuck bodycomprises: one or more chucking electrodes; and one or more heatingelements; first terminals disposed on the bottom surface of the chuckbody and coupled with the one or more heating elements, the firstterminals are configured mate with the first pins of the substratesupport; second terminals disposed on the bottom surface of the chuckbody and coupled with the one or more chucking electrodes, the secondterminals are configured to mate with the second pins of the substratesupport; and third terminals disposed on the bottom first surface of thechuck body and coupled with the one or more chucking electrodes.
 16. Theprocessing region of claim 15, wherein the electrostatic chuck furthercomprises centering elements disposed on the bottom surface of the chuckbody, and the chuck body further comprises passageway configured to flowa backside gas between the top surface of the chuck body and thesubstrate.
 17. The processing region of claim 15, wherein a matingsurface of the first terminals, the second terminals, and the thirdterminals is one of flat, convex, concave, or grooved.
 18. A clustertool assembly comprising: a processing region comprising: a pedestalassembly configured to move between a loading position and a processingposition, the pedestal assembly comprising a substrate supportcomprising first pins coupled to a first power supply and second pinscoupled to a second power supply; and an electrostatic chuck comprising:a chuck body having a top surface configured to support a substrate anda bottom surface opposite the top surface and configured to be supportedby the substrate support, wherein the chuck body comprises: one or morechucking electrodes; and one or more heating elements; first terminalsdisposed on the bottom surface of the chuck body and coupled with theone or more heating elements, the first terminals are configured matewith the first pins of the substrate support; second terminals disposedon the bottom surface of the chuck body and coupled with the one or morechucking electrodes, the second terminals are configured to mate withthe second pins of the substrate support; and third terminals disposedon the bottom first surface of the chuck body and coupled with the oneor more chucking electrodes.
 19. The cluster tool assembly of claim 18,wherein the electrostatic chuck further comprises centering elementsdisposed on the bottom surface of the chuck body, and the chuck bodyfurther comprises passageway configured to flow a backside gas betweenthe top surface of the chuck body and the substrate.
 20. The clustertool assembly of claim 18, wherein a mating surface of the firstterminals, the second terminals, and the third terminals is one of flat,convex, concave, or grooved.